Amorphous Layer Research Articles

Heterogeneous Ni-Boride/Phosphide Anchored Amorphous B-C Layer for Overall Water Electrocatalysis.

The rational design of efficient and economical bifunctional electrocatalysts remained a challenge for overall water electrolysis. In this work, the Ni-boride/ phosphide particles anchored amorphous B-doped carbon layer with hierarchical porous characteristics in Ni foam (Ni3P/Ni3B/B-C/NF) was fabricated for overall water splitting. The Boroncarbide (B4C) power was filled and fixed in the NF interspace through the electroplating and electroless plating, and then annealed in vacuum high temperature. The amorphous B-C layer derived from the B4 C not only speeded up the electron transport, but also cooperate with Ni-boride/phosphide to enhance the electrocatalytic activity for HER and OER synergistically. Furthermore, the hierarchical porous architecture of Ni3P/Ni3B/B-C/NF increased space utilization to load more active materials. The self-supported Ni3P/Ni3B/B-C/NF electrode possessed a low overpotential of 212 and 280 mV to deliver 100 mA cm-2 for HER and OER, respectively, and high stability for 48 h. In particular, the electrolyzer constituted with the Ni3P/Ni3B/B-C/NF bifunctional electrocatalyst only required a voltage of 1.59 V at 50 mA cm-2 for water electrocatalysis under alkaline medium, and demonstrated long-term stability for 48 h. This study provides a new technical path for the development of bifunctional of transition metal borides to promote the application of hydrogen production from water splitting.

Synthesis, characterisation and in vitro anticancer activity of conjugated protease inhibitor-silver nanoparticles (AgNPs-PI) against human breast MCF-7 and prostate PC-3 cancer cell lines.

The conjugated silver nanoparticles using biomolecules have attracted great attention of researchers because physical dimensions and surface chemistry play important roles in toxicity and biocompatibility of AgNPs. Hence, in the current study, synthesis of bio-conjugated AgNPs with protein protease inhibitor (PI) isolated from Streptomyces spp. is reported. UV-visible spectra of PI and AgNPs showed stronger peaks at 280 and 405nm, confirming the synthesis of conjugated AgNPs-PI. TEM and SEM images of AgNPs-PI showed spherical-shaped nanoparticles with a slight increase in particle size and thin amorphous layer around the surface of silver nanomaterial. Circular dichroism, FT-IR and fluorescence spectral studies confirmed AgNPs-PI conjugation. Conjugated AgNPs-PI showed excellent anticancer potential than AgNPs and protease inhibitor separately on human breast MCF-7 and prostate PC-3 cell lines. The findings revealed that surface modification of AgNPs with protein protease inhibitor stabilised the nanomaterial and increased its anticancer activity.

Analysis of the Structure of Heavy Ion Irradiated LaFeO3 Using Grazing Angle X-ray Absorption Spectroscopy.

Crystalline ceramics are candidate materials for the immobilization of radionuclides, particularly transuranics (such as U, Pu, and Am), arising from the nuclear fuel cycle. Due to the α-decay of transuranics and the associated recoil of the parent nucleus, crystalline materials may eventually be rendered amorphous through changes to the crystal lattice caused by these recoil events. Previous work has shown irradiation of titanate-based ceramics to change the local cation environment significantly, particularly in the case of Ti which was shown to change from 6- to 5-fold coordination. Here, this work expands the Ti-based study to investigate the behavior in Fe-based materials, using LaFeO3 as an example material. Irradiation was simulated by heavy ion implantation of the bulk LaFeO3 ceramic, with the resulting amorphous layer characterized with grazing angle X-ray absorption spectroscopy (GA-XAS). Insights into the Fe speciation changes exhibited by the amorphized surface layer were provided through quantitative analysis, including pre-edge analysis, and modeling of the extended X-ray absorption fine structure (EXAFS), of the GA-XAS data.

Zero Voltage-Degradation of Li2MnO3 with Ultrathin Amorphous Li─Mn─O Coating.

Manganese-based lithium-rich layered oxides (Mn-LLOs) are promising candidate cathode materials for lithium-ion batteries, however, the severe voltage decay during cycling is the most concern for their practical applications. Herein, an Mn-based composite nanostructure constructed Li2MnO3 (LMO@Li2MnO3) is developed via an ultrathin amorphous functional oxide LixMnOy coating at the grain surface. Due to the thin and universal LMO amorphous surface layer etched from the lithiation process by the high-concentration alkaline solution, the structural and interfacial stability of Li2MnO3 are enhanced apparently, showing the significantly improved voltage maintenance, cycle stability, and energy density. In particular, the LMO@Li2MnO3 cathode exhibits zero voltage decay over 200 cycles. Combining with ex situ spectroscopic and microscopic techniques, the Mn2+/4+ coexisted behavior of the amorphous LMO is revealed, which enables the stable electrochemistry of Li2MnO3. This work provides new possible routes for suppressing the voltage decay of Mn-LLOs by modifying with the composite functional unit construction.

Strength and toughness of semicrystalline polymer fibers: influence of molecular chain entanglement

The mechanical properties of oriented semicrystalline polymers fibers are mainly determined by the semicrystalline morphology in which lamellar crystals and disordered amorphous layers are in staggered arrangement. As a stress transmission channel, amorphous entanglement network can affect the strength and toughness of fiber together with crystalline phase. In this study, the relationship between mechanical properties and amorphous entanglement of oriented poly (L- lactic acid) fibers was clarified by studying the cyclic loading characteristics. Based on the Haward-Thakray model of semi-crystalline polymers, the energy contributions of the crystalline phase and the amorphous phase are separated. During the deformation of oriented fiber, the crystal will be broken under the action of tight entanglement network, and the entanglement network can transfer stress well without failure under the action of straight chain. Therefore, although the crystalline phase and the amorphous phase jointly bear the strength, the toughness and fracture behavior mainly affected by the entangled network of the amorphous phase.

Preparation of integrated carbon fiber stitched fabric reinforced (SiBCN) ceramic/resin double-layered composites for ablation resistance, thermal insulation and compression resistance performance

This paper reports a novel integrated carbon fiber fabric reinforced ceramic/resin double-layered composite. The composites were prepared by a low energy consumption process of stratified impregnate pyrolysis. The double-layered composites consist of an amorphous SiBCN ceramic upper layer and a SiBCN resin bottom layer. In the ablation experiment, the temperature of the composite material's ablated surface exceeded 1850 °C, while the temperature of the backside remained below 70 °C within 60 s of ablation. Even after 90 s of ablation, the backside temperature was still significantly lower than the theoretical application temperature of SiBCN resin. The ablated surface has no visible pits or cracks. The maximum mass ablation rate and line ablation rate were −0.01259 mg/s and 0.000933 mm/s, respectively. High-density amorphous SiBCN ceramic layer effectively play the role of high temperature and ablation resistance. In addition, the compressive strengths of the composites before and after ablation were above 340 MPa. Integrated composites that combine anti-ablation, insulation, and compression resistance have potential in aerospace applications.

Robust Self‐powered Optoelectronic Synapses Based on Epitaxial InSe/GaN Heterojunction with Interfacial Charge‐Trapping Layer

AbstractNeuromorphic devices that parallelize perception, preprocessing, and computation functions are expected to play a significant role in future non‐von Neumann architecture computers. Herein, a new retina‐inspired broadband self‐powered optoelectronic synaptic device based on 2D/3D heterojunction of epitaxial InSe on GaN(0001) is reported. Few‐layer n‐type InSe is grown on p‐type GaN by physical vapor deposition in an ultra‐high vacuum (UHV) environment. The devices are fabricated using a shadow mask assisted UHV electrode deposition technique. High‐resolution transmission electron microscopy images reveal that an atomically thin amorphous layer, which induces highly efficient charge trapping, is formed at the InSe/GaN interface. The photoresponse spans from visible to near‐infrared, and the response time is prolonged to 103 ms owing to the deep trapping levels. Thus, synaptic functions, including excitatory postsynaptic current, paired‐pulse facilitation with a high index of up to 170%, short‐term plasticity, and high‐pass filtering characteristics, are realized. Additionally, the synapses demonstrated the merit of realizing image sharpening and arithmetic operations on the same device under infrared and visible light illumination. This study provides a new platform of 2D/3D heterostructures for robust optoelectronic synapses that may find applications in post‐Moore era neuromorphic vision systems.

Residual stress and subsurface damage in sapphire ultra-precision grinding

This study conducted experiments on ultra-precision grinding of sapphire using various strategies. It evaluated surface and subsurface characteristics across multiple dimensions, including morphology, scale, mechanical properties, residual stresses, lattice distortions, in-service properties, and chemical components. The research aimed to explore the intrinsic relationship between these behaviours. The findings revealed that both semi-finish grinding and ultra-precision grinding achieved ductile and low-roughness surfaces, with surface hardness enhancement near the grinding surface. Additionally, Raman spectra wave shifts were able to distinguish residual stresses at different grinding strategies, with larger stresses observed in ultra-precision grinding compared to semi-finish grinding and rough grinding. Furthermore, dense etching dislocation pits were observed on the ultra-precision grinding surface, responding to the scale of residual stress. The presence of larger subsurface cracks in semi-finish grinding and rough grinding was found to contribute to the release of residual stress. Moreover, ultra-precision grinding significantly reduced subsurface damage compared to rough grinding, with a reduction from 23.8 μm to 4.3 μm. Photothermal absorption during rough grinding was noted to be over 10 times higher than in ultra-precision grinding. Transmission electron microscopy (TEM) analysis revealed that subsurface damage included microcrack-induced line defects and uniform plastic deformation areas. This damage involved lattice aberrations, dislocations, stacking faults, and thin amorphous layers. The hardness and modulus of the subsurface damage layer were observed to decrease. Additionally, Raman spectra wave shifts were able to distinguish the subsurface damage layer in ultra-precision grinding. Energy-dispersive X-ray spectroscopy (EDS) analysis showed no change in the chemical components of the subsurface damage layer. Furthermore, a model was proposed to evaluate subsurface damage based on residual stress, and the mechanism of residual stress inducing damage in ultra-precision grinding was further analysed.

Impact of Amorphous LiF Coating Layers on Cathode‐Electrolyte Interfaces in Solid‐State Batteries

AbstractHigh interfacial resistance between electrodes and solid‐state electrolyte is the major cause for the failure of all‐solid‐state Li‐ion batteries. Spontaneous (electro)chemical reactions and poor Li‐ion diffusion at the interfaces are closely related to this increased impedance. Although introducing a coating layer can mitigate interfacial reactions and structural reconstruction, it may also lead to poor Li‐ion diffusion. Balancing this trade‐off therefore is crucial for the design of coating layer materials. In this study, the impact of the amorphous LiF (a‐LiF) coating layer on interfacial structural reconstruction and Li‐ion diffusion at the LiCoO2/Li6PS5Cl solid‐state interface is explicitly elucidated via machine‐learning‐assisted molecular dynamics (MD) simulations. It is found that the a‐LiF can effectively protect the P‐S tetrahedron local structures in Li6PS5Cl but cannot suppress the formation of side product S2 dimers. It is further discovered that once the a‐LiF coating exceeds a certain critical thickness, emergence of ordered local structures will inhibit Li‐ion diffusion. The simulations propose that the optimal thickness of the coating layer is around 1 nm. Overall, the work provides a microscopic understanding for effects of the a‐LiF coating layer on the structural and kinetic properties of cathode‐solid electrolyte interfaces and can guide the design of interfacial coating materials for solid‐state batteries.

Dependence of the M choice on the properties of Hf(M)SiCN (M = Nb, Ta, Ti, Zr) ceramic coatings: ab-initio and experimental study

The HfMSiCN coatings (M = Nb, Ta, Ti, Zr) are researched using ab-initio theoretical method and double glow plasma surface alloying. The aim is to enhance the high temperature stability and wear resistance of these coatings, alongside optimizing mechanical and thermodynamic properties. Firstly, the calculated mechanical properties for Hf0.5M0.5CN correlate with those experimental measurement for HfMSiCN. Secondly, the thermodynamic parameters exhibit that the Hf0.5Zr0.5CN has the lowest thermal expansion coefficient and higher bulk modulus at high-temperatures. Moreover, the wear rate of HfZrSiCN at 500 ℃ is less than 60% of its wear rate at 300 ℃. The superior wear resistance of HfZrSiCN coating is attributed to a friction-induced composite layer including a dense amorphous nanocomposite surface layer and a nano-friction glaze layer supported by nanograins.

Surface-Diffusion-Induced Amorphization of Pt Nanoparticles over Ru Oxide Boost Acidic Oxygen Evolution.

Phase transformation offers an alternative strategy for the synthesis of nanomaterials with unconventional phases, allowing us to further explore their unique properties and promising applications. Herein, we first observed the amorphization of Pt nanoparticles on the RuO2 surface by in situ scanning transmission electron microscopy. Density functional theory calculations demonstrate the low energy barrier and thermodynamic driving force for Pt atoms transferring from the Pt cluster to the RuO2 surface to form amorphous Pt. Remarkably, the as-synthesized amorphous Pt/RuO2 exhibits 14.2 times enhanced mass activity compared to commercial RuO2 catalysts for the oxygen evolution reaction (OER). Water electrolyzer with amorphous Pt/RuO2 achieves 1.0 A cm-2 at 1.70 V and remains stable at 200 mA cm-2 for over 80 h. The amorphous Pt layer not only optimized the *O binding but also enhanced the antioxidation ability of amorphous Pt/RuO2, thereby boosting the activity and stability for the OER.

In situ one step growth of amorphous tin oxide electron transport layer for high-performance perovskite solar cells.

Tin oxide used in electron transport layer (ETL) exhibits key role in transmitting electrons and blocking holes in perovskite solar cells (PSCs) device. However, crystal tin oxide nanoparticles (NPs) become necessary to form SnO2 film by method of spin-coating, resulting in possible surface defect and cracks among SnO2 NPs, corresponding to unsatisfied performance PSCs. Herein, an amorphous tin oxide thin film is creatively in situ grew onto Fluorine-doped Tin Oxide (FTO) substrate as ETL. The designed solar cell device with structure of FTO/SnO2/MAPbI3/Sprio-OMeTAD/Ag owns a champion photoelectric conversion efficiency (PCE) up to 17.64%, 76.20% of filling coefficient (FF), and 1.09 V of open-circuit voltage (Voc), in comparing with 16.43%, 64.35% and 1.05 V for control group (crystal tin oxide as ETL), respectively. Besides, the champion device keeps 83.33% of initial PCE under nitrogen (N2) condition for one month, in comparison with 76.09% for control group. This work provides a viable strategy for facile preparing amorphous tin oxide film based ETL in perovskite solar cells.

Understanding the Molecular Arrangement and Orientation Characteristics of Mesophase Pitch and Its Fibers via a Polarized Light Microscope.

A polarized light microscope (PLM) was utilized to examine the optical textures of mesophase pitch (MP) and MP-derived fibers, which aimed to reveal the arrangement and orientation characteristics of pitch molecules and to clarify the evolution and transformation mechanism of carbonaceous microcrystalline from pitch fibers to graphitized fibers. The results found that there were distinct optical textures in MP, where one side exhibited a transition from a flattening plane to a mountain-like undulating plane. This transition corresponded to the arrangement of pitch molecules, resembling stacked lamellar structures reminiscent of curved paper. Meanwhile, the optical textures of fibers revealed that the blue substance was wrapped around the red grain-like domains in the longitudinal section and confirmed that the red part belonged to the pyridine insoluble fraction of MP and the blue part belonged to its pyridine-soluble fraction. After graphitization, the red part was transformed into graphite sheets and the blue part was transformed into an amorphous carbon layer which was wrapped around the graphite sheets, forming a carbonaceous microcrystalline package-like bag. Therefore, this study provided a comprehensive interpretation of the structural evolution mechanism of MP and MP-derived fibers based on their macro-optical textures and micro-nanostructures.

Fabrication of thin-film batteries composed of LiCoO2, Li3PO4, and Li layers

AbstractThis paper reports the fabrication of thin-film batteries which are composed of three stacking layers: LiCoO2, Li3PO4, and Li. First, a LiCoO2 layer is constructed on an electron-conductive substrate by pulsed laser deposition as a cathode. The crystallinity of the LiCoO2 layer is mainly controlled by the cationic ratio of Li and Co. Subsequently, an amorphous Li3PO4 layer with a high ionic conductivity is further deposited on the cathode LiCoO2 layer by radio frequency magnetron sputtering as a solid electrolyte. To avoid any possible damage which causes the formation of resistive species between LiCoO2 and Li3PO4, bias control of the substrate during Li3PO4 deposition is essential. Finally, a Li metal layer is deposited as an anode/current collector on the Li3PO4/LiCoO2 bilayer by resistive heating evaporation in a vacuum at an elevated temperature for the formation of a low resistive interface. The fabricated three-layer thin-film battery shows a high-rate capability when the LiCoO2 layer is a (104)-oriented epitaxial film.

Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth

Integrating diamonds with GaN presents a promising solution for enhancing heat dissipation. However, a critical challenge lies in developing an engineering substrate that facilitates the growth of high-quality GaN epitaxial layers, enabling the production of GaN-based devices with superior thermal management on a large scale. In this study, we have successfully developed an engineering substrate conducive to high-quality GaN growth. This accomplishment was achieved through the direct transfer of a 3 C-SiC thin film, originally grown on Si, to a diamond substrate at room temperature using the surface-activated bonding technique. After the transfer process, we observed the presence of a SiC amorphous layer at the interface, measuring approximately 18.5 nm in thickness. Notably, this thickness reduced to 14.5 nm after annealing at 1100 °C, indicating a transformation from amorphous to polycrystalline SiC due to recrystallization. Furthermore, it is crucial to highlight that no exfoliation of the 3 C-SiC/diamond bonding interfaces was observed even after subjecting them to annealing at 1100 °C. This observation is pivotal for ensuring the high-quality growth of GaN crystals on diamonds. The thermal boundary conductance of the 3 C-SiC/diamond interface reached nearly 93 MW/m2·K, demonstrating significant efficiency for device cooling. These compelling results highlight the potential of the 3 C-SiC/diamond engineering substrate to enable high-performance GaN-based devices, providing significantly enhanced thermal management capabilities. This breakthrough represents a major stride forward in the field.

Surface Nitriding Enables Improved Intercalation Pseudocapacitance of T−Nb2O5 for Lithium‐Ion Batteries

AbstractThe low electrical conductivity limits the application of T−Nb2O5 as anode materials for practical applications. The large‐grain T−Nb2O5 nanowires with nitrogen doping are obtained by simple hydrothermal and annealing treatments. After nitriding with ammonia, an amorphous layer of NbON as an intermediate is formed and then the new crystalline NbN is generated with the deepening of the nitriding degree, causing homogeneous pores on the surface of the T−Nb2O5 and thus increasing the specific surface area. Meanwhile, the formation of the nitriding layer enhances the electrical conductivity, inducing a pseudo‐capacitance mechanism. Therefore, the N−T−Nb2O5 nanowire demonstrates superior electrochemical performance. Specifically, the 45N−T−Nb2O5 nanowires delivered a first reversible specific capacity of 238.33 mAh g−1 at 0.1 C, higher than of theoretical capacity (201.6 mAh g−1). However, the excessive nitride will be completely converted into NbN, reducing the initial lithium storage of the material due to the lack of a lithium storage site, which has not been previously discussed. Besides, at the high rate of 100 C, with the deepening of nitride degree of the T−Nb2O5, the higher the rate performance. Therefore, to find the balance between the high rate performance and the initial lithium storage amount, the nitride degree should be strictly controlled.

Friction and wear behavior of C implanted copper via ion beam-assisted bombardment

This work modified the surface of copper using physical vapor deposition and investigated the wear behavior of the modified copper at low load and sliding speed. The results of the study showed that the adhesion between the thin film prepared using the ion beam deposition technique and the substrate was insufficient, leading to an increased wear rate of copper after surface modification. However, when carbon particles were injected using ion beam-assisted bombardment, the friction properties of copper were significantly improved, with a decrease in wear rate from 1.6 × 10−4 to 8 × 10−6 mm3/N m and a 40% reduction in friction coefficient. This improvement can be attributed to the amorphous carbon layer on the copper surface, as well as the injection of carbon particles into the substrate, which enhanced the adhesion between the film and the substrate. Furthermore, a continuous copper oxide film formed during the friction and wear process, providing lubrication and protection to the substrate in conjunction with the amorphous carbon layer. Additionally, the primary wear mechanism of copper shifted from abrasive and adhesive wear to oxidation wear after ion beam-assisted bombardment with carbon injection. This study provides new insights and methods for material design and engineering applications by investigating the effects of ion beam-assisted bombardment technology on the wear resistance of copper materials.

Electrical and dielectric properties of ferromagnetic GeMn nanocrystals embedded in metal-oxide-semiconductor Schottky diodes (Al/SiO2:GeMn NCs/n-Si) grown by MBE

This study examines the electrical and dielectric characteristics of magnetic GeMn nanocrystals integrated into a metal-insulator-semiconductor (MOS) configuration for optoelectronic applications. The nanocrystals were produced by solid-state dewetting of an amorphous GeMn layer deposited by MBE on SiO2/Si. The nanocrystals exhibit a well-defined hemispheric shape, high homogeneity, and with a Curie temperature higher than that of the ambient temperature. Characterizations by transmission electron microscopy (TEM) coupled with energy-dispersive X-ray spectroscopy (EDS) revealed the crystallinity of the nanocrystals and optimal incorporation of manganese in the nanocrystals, eliminating the usual diffusion or segregation anomalies observed during growth of GeMn alloy on silicon or germanium. Electrical and dielectric tests conducted via current-voltage and impedance spectroscopies on these structures confirmed the integrity of the oxide layer surrounding the GeMn nanocrystals from defects associated with the manganese. In addition, these measurements validated the proper functioning of the MOS structure as a MOS-type Schottky diode. The in-depth analysis of dielectric parameters, such as permittivity (ε), tangent δ, and electric modulus (M) as a function of frequency and bias voltage, revealed no anomalies, thus reinforcing the high quality of the MOS structure enclosing the GeMn nanocrystals.These results mark a significant advance in the growth and integration of magnetic semiconductor nanostructures for optoelectronic applications, paving the way for promising technological developments.

Evolution of interfacial phases between Al alloy and high entropy alloy during annealing

While the interfacial phases between Al and high-entropy alloy (HEA) share the same types as that between Al and steel, it has been found previously that the thermal stability of the Al-HEA interfacial phases is significantly higher than that of the Al-steel interfacial phases. To further elucidate the reason for the exceptional thermal stability of Al-HEA interfacial phases, this study investigated the evolution of the interfacial phases formed between Al alloy and FeCoCrNiMn HEA during annealing. An Al-FeCoCrNiMn thin film diffusion couple was extracted from a friction stir lap welding (FSLW) joint by focused ion beam and then annealed at 400 °C. An amorphous layer is formed initially at the interface due to the high strain rate deformation during FSLW. The amorphous layer remained even after prolonged annealing at 400 °C (~0.72 Tm of Al alloy) for 60 min with very limited thickening (from 50 nm to 55 nm), showing remarkable thermal stability at the relatively high temperature. Al13Fe4-type IMC with the Fe site occupied by Fe, Co, Cr, Ni and Mn first nucleates at the interface between Al alloy and amorphous layer. With the annealing time extended to 180 min, the amorphous layer is partially transformed into Al5Fe2-type IMC. The rate constant for the thickening of the reaction layer at the Al/FeCoCrNiMn interface is 0.03 μm∙min1/2, which is much smaller than (only 0.02 times) that at the Al/steel interface under similar annealing condition. The high thermal stability of Al-HEA interfacial layer is thus attributed to the slow kinetics in crystallization of the initially formed amorphous layer, the barrier effect of amorphous layer for interdiffusion, and the reduced diffusivity inside of IMCs caused by significant fluctuations in lattice potential energy due to high-density doping with HEA elements. This finding provides new insights into the fabrication of thermally stable Al-HEA hybrid structures suitable for service conditions involving high-temperature exposure.

In-situ formed amorphous phase in aluminum/steel friction stir welds: Interface evolution and strength improvement

Aluminum/steel structures are widely proposed for weight reduction in aviation, aerospace, and automotive industries, whereas the applications of aluminum/steel structures are still limited due to the unreliable welding related to the intermetallic compounds. In this study, an amorphous layer was in-situ formed at the aluminum/steel interface, replacing the intermetallic compounds, and strengthening the welds. The effects of the plunge depth on the microstructure and mechanical properties of the Al/steel friction stir welds were further investigated. The amorphous phase was only formed when the welding tool was plunged to the interface precisely. Once the plunge depth was further increased, the amorphous layer would grow over the critical thickness of 18 nm and, subsequently, be replaced by the FeAl3 and FeAl. Different interfacial microstructure led to the different strength and fracture characteristics. The ultimate load of 6237 N was achieved with the in-situ formed amorphous layer, and it was improved by 45 %, as compared to the previous results.